View RT1N141_241183.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SERIES
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N141X is a one chip transistor with built-in bias resistor,PNP type is RT1P141X. RT1N141U
1.6
OUTLINE
DRAWING
RT1N141C
2.5
UNITmm
FEATURE
Built-in bias resistor (R1=10k,R2=10k).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3

0.95

2.9 1.90
1.6 1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
0.7 0.15 1.1 0.55 0.8 0.16
00.1
R1 B (IN) R2
C (OUT)
JEITA JEDEC Terminal Connector Base Emitter Collector
JEITASC-59 JEDECSimilar to TO-236 Terminal Connector Base Emitter Collector
E (GND)
RT1N141M RT1N141S
2.1 4.0 0.425 1.25 0.425
RT1N141T
00.1
Equivalent circuit
0.95
0.5
0.2
0.8
0.2
3.0
0.65
0.3

0.4

1.0
2.0 1.3
0.65
1.2 0.8
0.1 0.45
14.0
1.0
0.9
0.4
0.7
00.1
2.5
0.15
0.45
1.27 1.27
0.4
JEITA JEDEC Terminal Connector Emitter Collector Base
JEITASC-70 JEDEC Terminal Connector Base Emitter Collector
JEITA JEDEC Terminal Connector Base Emitter Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
0.4
SERIES
MAXIMUM RATING (Ta=25)
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RT1N141T RT1N141U RATING RT1N141M 50 10 50 100 200 150
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
RT1N141C
RT1N141S
UNIT V V V mA mA
125 +125 -55+125
125
450 +150 -55+150
mW
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25)
SYMBOL PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=100ARBE= VCB=50VI E =0 VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=0.2VI C =5mA VCE=5VI C =100A MIN 50 50 0.1 1.5 1.1 10 1.0 200 0.3 3.0 13 1.1 LIMIT TYP MAX 0.1 UNIT V A V V V k MHz
0.8 7.0 0.9
VCE=6VI
E
=-10mA
TYPICAL CHARACTERISTICS
Input On Voltage - Collector Current 10 DC Forward Current Gain 1 10 Collector Current 100 Input On Voltage DC Forward Current Gain - Collector Current 1000
1
100
0.1
10 1 10 Collector Current 100
Collector Current - Input Off Voltage 1000 Collector Current
100
10 0.0 0.4 0.8 1.2 1.6 2.0 Input Off Voltage
ISAHAYA ELECTRONICS CORPORATION

▲Up To Search▲

Price & Availability of RT1N141

	To Download RT1N141 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .